VisIC Partners With TSMC for 1200V GaN-based Modules

8 February, 2018

"GaN has better fundamental physical properties, such as maximal breakdown field and current density, than those of silicon or SiC," said VisIC CTO Gregory Bunin

VISIC POWER MODULE

Photo above: VisIC’s 1200V module with proposed cooling solution

VisIC Technologies begins to sample the industry’s first 1200V GaN modules, and announcing a major manufacturing partnership with TSMC for its GaN on silicon technologies, that were announced last year. The new VisIC module based on TSMC’s 650D GaN-on-Silicon process, provides typical on resistance of just 40 mΩ and switching time below 10 nanoseconds. Its target applications are power converters for motor drives, three-phase power supplies and other applications requiring current switching up to 50 A.

VisIC’s 1200V GaN device is a half-bridge module that integrates GaN high-electron mobility transistors (HEMTs) with push-pull and over-current and over-temperature protections in a single package. The design takes advantage of VisIC’s innovative Advanced Low Loss Switch (ALL-Switch) technology, which uses a patented, high-density lateral layout that results in fast switching performance and low RDS(on).

The high-voltage GaN module offers reduced gate charge and capacitances with low RDS(on), so the switching energy for the GaN device is as low as 140 µJ. Consequently, the switching losses are three to five times lower as compared to comparable silicon carbide MOSFETs. “GaN has better fundamental physical properties, such as maximal breakdown field and current density, than those of silicon or SiC,” said VisIC CTO Gregory Bunin. “This manufacturing partnership allows VisIC to ramp capacity very quickly.”

1200V Blocking Voltage Suggests New Markets

GaN is expected to replace most of the Silicon-based (Si) products currently used in power conversion systems. The GaN power device market is predicted to reach approximately $332 million in 2022 according to Yole Développement, based on products rated for 650V of blocking voltage and below. VisIC’s product opens access to a wider market of devices with 1200V blocking voltage, currently serviced by Silicon IGBT and Silicon Carbide (SiC) MOSFET devices.

This extremely fast power switch module enables small yet efficient xEV chargers and uninterruptible power supply (UPS) systems. The 1200V GaN technology also enables a wide range of inverter applications, which require high current, in the range of hundreds of Amperes. Based in Nes Ziona, Israel, VisIC Technologies was established in 2010 by Gregory Bunin, who has led the semiconductor centers, MIET and PULSAR in Moscow. In Israel Gregory worked in the Weizmann Institute of Science, ELTA and Gal El (MMIC).  Gregory has more than 30 years’ experience in compound semiconductor technology development. His last pre-VisIC major  achievement was completing design of a state-of-the-art GaN RF high power amplifier.

More information: http://visic-tech.com

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Posted in: News , Semiconductors

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