VisIC Raised $10M to Speed Up its GaN Power Modules
7 June, 2018
Last February VisIC started sampling the industry's first 1200V GaN modules, and announced a major manufacturing partnership with TSMC
VisIC Technologies from Nes Ziona, Israel, announced today that it has closed $10 million in a Series D round of financing led by a private investor. “With the new funding, we can expand our portfolio further to address more market segments,” said Tamara Baksht, VisIC Technologies’ co-founder and CEO. VisIC was established in 2010 by experts in Gallium Nitride (GaN) technology to develop and sell advanced GaN-based power conversion products.
Last February it started sampling the industry’s first 1200V GaN modules, and announced a major manufacturing partnership with TSMC on their GaN on silicon technologies that were announced in 2017. The company’s 1200V module, based on TSMC’s 650D GaN-on-Silicon process, provides switching time below 10 nanoseconds is ensured by a high electron mobility transistor (HEMT) design, where electrons flow in a 2-dimentional quantum well, which fundamentally differs from electron flow in SiC MOSFETs.
This GaN module offers typical on resistance of just 40 mΩ. Target applications are power converters for motor drives, three-phase power supplies and other applications requiring current switching up to 50 A. “GaN has better fundamental physical properties, such as maximal breakdown field and current density, than those of silicon or SiC,” said VisIC CTO Gregory Bunin.”The manufacturing partnership with TSMC allows VisIC to ramp capacity very quickly.”
According to Occams Business Research, the global GaN power device market is expected to grow with a CAGR of over 24% during the forecast period of 2016-2023. Yole Développement estimates that the GaN power device market is about to reach over US$ 332,5 million in 2022. Gallium Nitride (GaN) is a chemical compound made of gallium and nitrogen. It is considered a wonder material due to its high band gap energy of 3.4 electron volt, compared to 1.14ev in silicon and 0.67ev in germanium. The high band gap energy of the gallium nitride made it ideal to use in power electronics industry.
Photo above: VisIC Technologies’ power GaN module with external cooling system
Posted in: News