TowerJazz Won over 50 Design wins for Silicon Radio

13 March, 2013

In a recent press release, TowerJazz estimated that GaAs technologies is expected to more than triple the portion of the FEM (Front-End Module) of Silicon Radio market available to TowerJazz over the next several years

The Silicon Germanium (SiGe) process is built in 0.18um technology

TowerJazz from Migdal-Haemeq, Israel, may become a majot player in the fast growing Front-End Module (FEM) market, providing its Silicon Radio Platform (SRP) for smartphones and other mobile systems. The company announced it has won over 50 separate designs taped-in with initial designs ramping to production.

TowerJazz’s SRP allows integration of the radio in mobile devices including components such as antenna switches, antenna tuners, diversity switches, controllers, low-noise-amplifiers (LNAs) and power amplifiers )PAs). This new technology is eliminating the need for expensive discrete GaAs devices.

The Silicon Germanium (SiGe) process is built in 0.18um technology and also includes a through-silicon-via (TSV) witj performance comparable to that of GaAs at only 40% of the cost.

In a recent press release, TowerJazz estimated that GaAs technologies is expected to more than triple the portion of the FEM (Front-End Module) of Silicon Radio market available to TowerJazz over the next several years.

According to a 2012 report by Mobile Experts, LLC, the handset front-end market is expected to double to $10 billion and the number of RF paths is expected to grow to 20 billion by 2017. The report indicates that multi-mode, multi-band handsets and MIMO (multiple-input and multiple-output) systems will drive staggering growth in the number of RF components shipped for mobile devices.

“By mastering both digital and analog technologies, TowerJazz is in a unique position to ride these trends successfully and grow more rapidly in the marketplace, as being evidenced by our FEM market leadership,” said Russell Ellwanger, CEO of TowerJazz.

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Posted in: Featured Stories , Semiconductors