Tower Semiconductor Announced ultra-fast RF Switch
3 August, 2020
The new switches achieved On/Off transition times (Ron Coff) shorter than 10 femtoseconds vs. 70-100 femtoseconds in use today for the most advanced applications
Tower Semiconductor announced a new radio frequency (RF) switch technology with record figure of merit targeting the 5G and high-performance RF switch markets. The company is engaged with multiple customers and partners to bring this technology to market for next-generation products.
This new switch technology demonstrates a record RF device figure of merit: On/Off transition times (Ron Coff) shorter than 10 femtoseconds vs. 70-100 femtoseconds in use today for the most advanced applications. The switch performs over a wide range of frequencies spanning MHz to mmWave, including the frequency bands discussed for 5G.
The switch is also nonvolatile so consumes no energy when in the on-state or off-state, making it attractive for IoT, and other power and battery sensitive applications. Tower has demonstrated the versatility of this patented technology by integrating it with other process platforms such as SiGe BiCMOS and Power CMOS.
Tower Semiconductor will be offering multi-project wafer runs (MPWs) in 2021 for select customers. This model enables new customers to experience the technology in lower costs, by sharing the wafer in production with other interested parties. The new RF switch will be presented at IMS 2020 (International Microwave Symposium).
The abstract of Tower Semiconductor’s presentation in IMS 2020 reveals more details about the new technology: Two different sized layouts of four-terminal phase-change material (PCM) RF switches fabricated in a 200 mm silicon high volume manufacturing environment. Both layouts have with a record high FCO of 25 THz. Layout-A has a RON*C_OFF values of 6.2 fs, and Layout-B has a RON*C_OFF values of 6.3 fs.
Both layouts show minimal changes to RON or actuation voltage when cycled 10 million times. Also, a Layout-A device was cycled 1 billion times, demonstrating the ability of this RF switch to be used in high endurance applications.